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RPT-34PB3F Технические параметры
ROHM Semiconductor RPT-34PB3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Phototransistors | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | Radial | |
| Shape | ROUND | |
| Collector-Emitter Breakdown Voltage | 32V | |
| Operating Temperature | -25°C~85°C TA | |
| Packaging | Bulk | |
| Published | 2002 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | HIGH SENSITIVITY | |
| Max Power Dissipation | 150mW | |
| Orientation | Top View | |
| Number of Functions | 1Function |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Polarity | NPN | |
| Configuration | SINGLE | |
| Power Dissipation | 150mW | |
| Viewing Angle | 72° | |
| Output Power | 150mW | |
| Optoelectronic Device Type | PHOTO TRANSISTOR | |
| Lens Style | Domed | |
| Size | 3.1mm | |
| Rise Time | 10μs | |
| Fall Time (Typ) | 10 μs | |
| Collector Emitter Voltage (VCEO) | 32V | |
| Max Collector Current | 30mA | |
| Wavelength - Peak | 800 nm | |
| On-State Current-Max | 0.03A | |
| Dark Current | 500nA | |
| Infrared Range | YES | |
| Light Current-Nom | 2mA | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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