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RS1G180MNTB Технические параметры

ROHM Semiconductor  RS1G180MNTB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ROHM Semiconductor
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 18A Ta 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3W Ta 30W Tc
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1293pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 19.5nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Continuous Drain Current (ID) 18A
Drain-source On Resistance-Max 0.0092Ohm
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
RS1G180MNTB brand manufacturers: ROHM Semiconductor, Anli stock, RS1G180MNTB reference price.ROHM Semiconductor. RS1G180MNTB parameters, RS1G180MNTB Datasheet PDF and pin diagram description download.You can use the RS1G180MNTB Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find RS1G180MNTB pin diagram and circuit diagram and usage method of function,RS1G180MNTB electronics tutorials.You can download from the Anli.