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SH8M4TB1 Технические параметры
ROHM Semiconductor SH8M4TB1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 20 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Supplier Device Package | 8-SOP | |
| Current - Continuous Drain (Id) @ 25℃ | 9A 7A | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Max Power Dissipation | 2W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | *M4 | |
| Power Dissipation | 2W | |
| Power - Max | 2W | |
| FET Type | N and P-Channel | |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (ID) | 7A | |
| Drain to Source Breakdown Voltage | 30V | |
| Input Capacitance | 1.19nF | |
| FET Feature | Logic Level Gate | |
| Drain to Source Resistance | 17mOhm | |
| Rds On Max | 18 mΩ | |
| RoHS Status | ROHS3 Compliant |
SH8M4TB1 Документы
- DatasheetsSH8M4 SP8M4 SH8M4TB1-Rohm-datasheet-17022943.pdf
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