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TT8J11TCR Технические параметры

ROHM Semiconductor  TT8J11TCR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 650mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-F8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 650mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Continuous Drain Current (ID) 3.5A
Drain-source On Resistance-Max 0.043Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.5V Drive
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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TT8J11TCR Документы

TT8J11TCR brand manufacturers: ROHM Semiconductor, Anli stock, TT8J11TCR reference price.ROHM Semiconductor. TT8J11TCR parameters, TT8J11TCR Datasheet PDF and pin diagram description download.You can use the TT8J11TCR Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find TT8J11TCR pin diagram and circuit diagram and usage method of function,TT8J11TCR electronics tutorials.You can download from the Anli.