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UM6K34NTCN Технические параметры

ROHM Semiconductor  UM6K34NTCN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 16 Weeks
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Mount Surface Mount
Transistor Element Material SILICON
Number of Elements 2 Elements
Published 2011
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 120mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Свойство продукта Значение свойства
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 120mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 10V
Drain to Source Voltage (Vdss) 50V
Continuous Drain Current (ID) 200mA
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 2.8Ohm
DS Breakdown Voltage-Min 50V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 0.9V Drive
RoHS Status ROHS3 Compliant
Lead Free Lead Free

UM6K34NTCN Документы

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