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UMD9NFHATR Технические параметры

ROHM Semiconductor  UMD9NFHATR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin/Copper (Sn/Cu)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.7
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 150mW
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status ROHS3 Compliant
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UMD9NFHATR Документы

UMD9NFHATR brand manufacturers: ROHM Semiconductor, Anli stock, UMD9NFHATR reference price.ROHM Semiconductor. UMD9NFHATR parameters, UMD9NFHATR Datasheet PDF and pin diagram description download.You can use the UMD9NFHATR Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find UMD9NFHATR pin diagram and circuit diagram and usage method of function,UMD9NFHATR electronics tutorials.You can download from the Anli.