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UMH1NTN Технические параметры

ROHM Semiconductor  UMH1NTN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case SOT-363
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 56
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 1
HTS Code 8541.21.00.75
Свойство продукта Значение свойства
Voltage - Rated DC 50V
Max Power Dissipation 150mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 30mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
Polarity NPN
Element Configuration Dual
Power Dissipation 150mW
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
DC Current Gain-Min (hFE) 56
Continuous Collector Current 100mA
VCEsat-Max 0.3 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
UMH1NTN brand manufacturers: ROHM Semiconductor, Anli stock, UMH1NTN reference price.ROHM Semiconductor. UMH1NTN parameters, UMH1NTN Datasheet PDF and pin diagram description download.You can use the UMH1NTN Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find UMH1NTN pin diagram and circuit diagram and usage method of function,UMH1NTN electronics tutorials.You can download from the Anli.