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US5U30TR Технические параметры
ROHM Semiconductor US5U30TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SMD (5 Leads), Flat Lead | |
| Number of Pins | 5Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 1A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1W Ta | |
| Turn Off Delay Time | 25 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2007 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Voltage - Rated DC | -20V | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -1A | |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 5 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1W | |
| Turn On Delay Time | 9 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 390m Ω @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V | |
| Rise Time | 8ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Vgs (Max) | ±12V | |
| Fall Time (Typ) | 10 ns | |
| Continuous Drain Current (ID) | 1A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 1A | |
| Drain-source On Resistance-Max | 0.43Ohm | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Feature | Schottky Diode (Isolated) | |
| Height | 850μm | |
| Length | 2.9mm | |
| Width | 1.6mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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