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US6J12TCR Технические параметры

ROHM Semiconductor  US6J12TCR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Current - Continuous Drain (Id) @ 25℃ 2A Ta
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 910mW Ta
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 105m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
FET Feature Standard
RoHS Status ROHS3 Compliant
US6J12TCR brand manufacturers: ROHM Semiconductor, Anli stock, US6J12TCR reference price.ROHM Semiconductor. US6J12TCR parameters, US6J12TCR Datasheet PDF and pin diagram description download.You can use the US6J12TCR Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find US6J12TCR pin diagram and circuit diagram and usage method of function,US6J12TCR electronics tutorials.You can download from the Anli.