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US6K1TR Технические параметры

ROHM Semiconductor  US6K1TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 15 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 340MOhm
Terminal Finish Tin/Copper (Sn/Cu)
Voltage - Rated DC 30V
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *K1
Pin Count 6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Rise Time 9ns
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 1.5A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

US6K1TR Документы

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