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US6M1TR Технические параметры

ROHM Semiconductor  US6M1TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.4A 1A
Number of Elements 2 Elements
Turn Off Delay Time 25 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 280MOhm
Terminal Finish Tin/Copper (Sn/Cu)
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Current Rating 1.4A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 6M1
Свойство продукта Значение свойства
Pin Count 6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 5V
Rise Time 8ns
Drain to Source Voltage (Vdss) 30V 20V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) -12V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.5 V
Height 770μm
Length 2mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

US6M1TR Документы

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