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US6T4TR Технические параметры

ROHM Semiconductor  US6T4TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ROHM Semiconductor
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Current-Collector (Ic) (Max) 3A
Number of Elements 1 Element
hFEMin 270
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish TIN COPPER
Свойство продукта Значение свойства
Max Power Dissipation 1W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number US6T
Pin Count 6
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 30mA, 1.5A
Transition Frequency 280MHz
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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US6T4TR Документы

US6T4TR brand manufacturers: ROHM Semiconductor, Anli stock, US6T4TR reference price.ROHM Semiconductor. US6T4TR parameters, US6T4TR Datasheet PDF and pin diagram description download.You can use the US6T4TR Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find US6T4TR pin diagram and circuit diagram and usage method of function,US6T4TR electronics tutorials.You can download from the Anli.