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US6T8TR Технические параметры

ROHM Semiconductor  US6T8TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 1.5A
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish TIN COPPER
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS
Power - Max 400mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 400MHz
Frequency - Transition 400MHz
Power Dissipation-Max (Abs) 0.4W
RoHS Status ROHS3 Compliant
Lead Free Lead Free

US6T8TR Документы

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