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VT6K1T2CR Технические параметры

ROHM Semiconductor  VT6K1T2CR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 20 ns
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2011
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 120mW
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 7.1pF @ 10V
Rise Time 4ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.1A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.2V Drive
RoHS Status ROHS3 Compliant
Lead Free Lead Free

VT6K1T2CR Документы

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