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VT6M1T2CR Технические параметры

ROHM Semiconductor  VT6M1T2CR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 1997
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 120mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Свойство продукта Значение свойства
Pin Count 6
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode ENHANCEMENT MODE
Power - Max 120mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 7.1pF @ 10V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 100mA
Drain Current-Max (Abs) (ID) 0.1A
Drain-source On Resistance-Max 4.2Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.2V Drive
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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VT6M1T2CR Документы

VT6M1T2CR brand manufacturers: ROHM Semiconductor, Anli stock, VT6M1T2CR reference price.ROHM Semiconductor. VT6M1T2CR parameters, VT6M1T2CR Datasheet PDF and pin diagram description download.You can use the VT6M1T2CR Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find VT6M1T2CR pin diagram and circuit diagram and usage method of function,VT6M1T2CR electronics tutorials.You can download from the Anli.