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ROHM Semiconductor ZDX080N50 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 13 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 8A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 40W Tc | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Published | 2012 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 850m Ω @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
| Drain to Source Voltage (Vdss) | 500V | |
| Vgs (Max) | ±30V | |
| Continuous Drain Current (ID) | 8A | |
| JEDEC-95 Code | TO-220AB | |
| Drain Current-Max (Abs) (ID) | 8A | |
| Drain-source On Resistance-Max | 0.85Ohm | |
| Pulsed Drain Current-Max (IDM) | 24A | |
| DS Breakdown Voltage-Min | 500V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |