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- K4B1G1646G-BCK0
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K4B1G1646G-BCK0 Технические параметры
Samsung K4B1G1646G-BCK0 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | Samsung | |
| Surface Mount | YES | |
| Number of Terminals | 96Terminals | |
| Package Description | FBGA, BGA96,9X16,32 | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Moisture Sensitivity Levels | 1 | |
| Number of Words Code | 64000000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | BGA96,9X16,32 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 0.225 ns | |
| Rohs Code | Yes | |
| Manufacturer Part Number | K4B1G1646G-BCK0 | |
| Clock Frequency-Max (fCLK) | 800 MHz | |
| Number of Words | 67108864 wordsWord | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Package Code | FBGA | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Samsung Semiconductor | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Risk Rank | 5.8 | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | Yes | |
| Terminal Finish | MATTE TIN | |
| Subcategory | DRAMs | |
| Technology | CMOS | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 225 | |
| Terminal Pitch | 0.8 mm | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PBGA-B96 | |
| Qualification Status | Not Qualified | |
| Power Supplies | 1.5 V | |
| Supply Current-Max | 0.195 mA | |
| Organization | 64MX16 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 16 | |
| Standby Current-Max | 0.01 A | |
| Memory Density | 1073741824 bit | |
| I/O Type | COMMON | |
| Memory IC Type | DDR DRAM | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 4,8 | |
| Interleaved Burst Length | 4,8 |
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