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K4B2G0846D-HCH9 Технические параметры

Samsung  K4B2G0846D-HCH9 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка Samsung
Surface Mount YES
Number of Terminals 78Terminals
Package Description FBGA, BGA78,9X13,32
Package Style GRID ARRAY, FINE PITCH
Number of Words Code 256000000Words Codes
Package Body Material PLASTIC/EPOXY
Package Equivalence Code BGA78,9X13,32
Access Time-Max 0.255 ns
Operating Temperature-Max 85 °C
Rohs Code Yes
Manufacturer Part Number K4B2G0846D-HCH9
Clock Frequency-Max (fCLK) 667 MHz
Number of Words 268435456 wordsWord
Supply Voltage-Nom (Vsup) 1.5 V
Package Code FBGA
Package Shape RECTANGULAR
Manufacturer Samsung Semiconductor
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Risk Rank 5.79
Свойство продукта Значение свойства
Subcategory DRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Terminal Pitch 0.8 mm
Reach Compliance Code compliant
JESD-30 Code R-PBGA-B78
Qualification Status Not Qualified
Power Supplies 1.5 V
Temperature Grade OTHER
Supply Current-Max 0.135 mA
Organization 256MX8
Output Characteristics 3-STATE
Memory Width 8
Standby Current-Max 0.012 A
Memory Density 2147483648 bit
I/O Type COMMON
Memory IC Type DDR DRAM
Refresh Cycles 8192
Sequential Burst Length 8
Interleaved Burst Length 8
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