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- K4H1G0838M-TCB3
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K4H1G0838M-TCB3 Технические параметры
Samsung K4H1G0838M-TCB3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | Samsung | |
| Surface Mount | YES | |
| Number of Pins | 66Pins | |
| Number of Terminals | 66Terminals | |
| RoHS | Compliant | |
| Package Description | TSSOP, TSSOP66,.46 | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Number of Words Code | 128000000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | TSSOP66,.46 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 0.7 ns | |
| Operating Temperature-Max | 70 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | K4H1G0838M-TCB3 | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| Number of Words | 134217728 wordsWord | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Package Code | TSSOP | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Samsung Semiconductor | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Risk Rank | 5.92 | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Operating Temperature | 70 °C | |
| Min Operating Temperature | 0 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Subcategory | DRAMs | |
| Technology | CMOS | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Terminal Pitch | 0.635 mm | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G66 | |
| Qualification Status | Not Qualified | |
| Operating Supply Voltage | 2.5 V | |
| Power Supplies | 2.5 V | |
| Temperature Grade | COMMERCIAL | |
| Supply Current-Max | 0.43 mA | |
| Access Time | 700 ps | |
| Data Bus Width | 8 b | |
| Organization | 128MX8 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 8 | |
| Address Bus Width | 16 b | |
| Density | 1 Gb | |
| Standby Current-Max | 0.006 A | |
| Memory Density | 1073741824 bit | |
| Max Frequency | 333 MHz | |
| I/O Type | COMMON | |
| Memory IC Type | DDR DRAM | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Interleaved Burst Length | 2,4,8 | |
| Radiation Hardening | No |
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