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K4H511638B-UCCC Технические параметры
Samsung K4H511638B-UCCC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | Samsung | |
| Surface Mount | YES | |
| Number of Terminals | 66Terminals | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Moisture Sensitivity Levels | 3 | |
| Number of Words Code | 32000000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | TSSOP66,.46 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 0.65 ns | |
| Operating Temperature-Max | 70 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | K4H511638B-UCCC | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| Number of Words | 33554432 wordsWord | |
| Supply Voltage-Nom (Vsup) | 2.6 V | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Samsung Semiconductor | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Risk Rank | 5.84 | |
| Pbfree Code | Yes | |
| Additional Feature | AUTO/SELF REFRESH | |
| Subcategory | DRAMs | |
| Technology | CMOS | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.65 mm | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G66 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Power Supplies | 2.6 V | |
| Temperature Grade | COMMERCIAL | |
| Supply Voltage-Min (Vsup) | 2.5 V | |
| Number of Ports | 1Port | |
| Operating Mode | SYNCHRONOUS | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Seated Height-Max | 1.2 mm | |
| Memory Width | 16 | |
| Standby Current-Max | 0.005 A | |
| Memory Density | 536870912 bit | |
| I/O Type | COMMON | |
| Memory IC Type | DDR DRAM | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Interleaved Burst Length | 2,4,8 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Self Refresh | YES | |
| Width | 10.16 mm | |
| Length | 22.22 mm |
Индекс :
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