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- K6F1008V2C-YF55
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K6F1008V2C-YF55 Технические параметры
Samsung K6F1008V2C-YF55 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | Samsung | |
| Surface Mount | YES | |
| Number of Terminals | 32Terminals | |
| Package Description | TSOP1, TSSOP32,.56,20 | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Number of Words Code | 128000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | TSSOP32,.56,20 | |
| Operating Temperature-Min | -40 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 55 ns | |
| Operating Temperature-Max | 85 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | K6F1008V2C-YF55 | |
| Number of Words | 131072 wordsWord | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Package Code | TSOP1 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Samsung Semiconductor | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Risk Rank | 5.83 | |
| Part Package Code | TSOP1 | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8542.32.00.41 | |
| Subcategory | SRAMs |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Technology | CMOS | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.5 mm | |
| Reach Compliance Code | unknown | |
| Pin Count | 32 | |
| JESD-30 Code | R-PDSO-G32 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Power Supplies | 3.3 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Operating Mode | ASYNCHRONOUS | |
| Supply Current-Max | 0.035 mA | |
| Organization | 128KX8 | |
| Output Characteristics | 3-STATE | |
| Seated Height-Max | 1.2 mm | |
| Memory Width | 8 | |
| Standby Current-Max | 0.000001 A | |
| Memory Density | 1048576 bit | |
| Parallel/Serial | PARALLEL | |
| I/O Type | COMMON | |
| Memory IC Type | STANDARD SRAM | |
| Standby Voltage-Min | 1.5 V | |
| Width | 8 mm | |
| Length | 11.8 mm |
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