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K4B4G1646D-BMK0000 Технические параметры

Samsung Electro-Mechanics  K4B4G1646D-BMK0000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Свойство продукта Значение свойства
Number of Words per Bank 32M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Minimum Operating Supply Voltage (V) 1.283|1.425
Typical Operating Supply Voltage (V) 1.35|1.5
Maximum Operating Supply Voltage (V) 1.45|1.575
RoHS Non-Compliant
Part Status Obsolete
Organization 256Mx16
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