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K4T1G164QG-BCE6000 Технические параметры

Samsung Electro-Mechanics  K4T1G164QG-BCE6000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Maximum Access Time (ns) 0.45
Address Bus Width (bit) 16
Interface Type SSTL_1.8
Minimum Operating Supply Voltage (V) 1.7
Maximum Clock Rate (MHz) 667
Data Bus Width (bit) 16
Number of Bits/Word (bit) 16Bits/Word (bit)s
Number of Words per Bank 8M
Number of Internal Banks 8Internal Banks
Chip Density (bit) 1G
DRAM Type DDR2 SDRAM
PPAP No
Automotive No
ECCN (US) EAR99
Свойство продукта Значение свойства
EU RoHS Compliant
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 90
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 12.5
PCB changed 84
Supplier Package FBGA
Part Status Obsolete
Pin Count 84
Organization 64Mx16
Просмотр сходства
K4T1G164QG-BCE6000 brand manufacturers: Samsung Electro-Mechanics, Anli stock, K4T1G164QG-BCE6000 reference price.Samsung Electro-Mechanics. K4T1G164QG-BCE6000 parameters, K4T1G164QG-BCE6000 Datasheet PDF and pin diagram description download.You can use the K4T1G164QG-BCE6000 Memory, DSP Datesheet PDF, find K4T1G164QG-BCE6000 pin diagram and circuit diagram and usage method of function,K4T1G164QG-BCE6000 electronics tutorials.You can download from the Anli.