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M470T5663QZ3-CE6 Технические параметры

Samsung Electronics  M470T5663QZ3-CE6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory Cards
Марка
ECCN (US) 4A994.a
Module DRAM Module
Module Density 2Gbyte
Number of Chip per Module 16Chip per Modules
Chip Density (bit) 1G
Data Bus Width (bit) 64
Max. Access Time (ns) 0.45
Maximum Clock Rate (MHz) 667
Chip Configuration 128Mx8
Chip Package Type FBGA
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 1240
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Module Sides Double
Свойство продукта Значение свойства
ECC Support No
Number of Ranks DualRank
Number of Chip Banks 8Chip Banks
CAS Latency 5
SPD EEPROM Support Yes
Standard Package Name DIM
Supplier Package USODIMM
Mounting Socket
Package Height 30
Package Length 67.6
Package Width 3.8(Max)
PCB changed 200
Lead Shape No Lead
Part Status Obsolete
Pin Count 200
Organization 256Mx64
PLL No
Self Refresh Yes
Module Type 200USODIMM
RoHS Status RoHS Compliant

M470T5663QZ3-CE6 Документы

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