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IRFI630A Технические параметры
Samsung Semiconductor IRFI630A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Drain Current-Max (ID) | 9 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| DS Breakdown Voltage-Min | 200 V | |
| Avalanche Energy Rating (Eas) | 162 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 3.1 W |
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