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K4A4G085WE-BIRC0CV Технические параметры

Samsung Semiconductor  K4A4G085WE-BIRC0CV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR4 SDRAM
Chip Density (bit) 4G
Number of Internal Banks 16Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 2400
Maximum Access Time (ns) 0.175
Address Bus Width (bit) 17
Interface Type POD
Свойство продукта Значение свойства
Minimum Operating Supply Voltage (V) 1.14
Typical Operating Supply Voltage (V) 1.2
Maximum Operating Supply Voltage (V) 1.26
Operating Current (mA) 90
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Industrial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 11
PCB changed 78
Supplier Package FBGA
Part Status Active
Pin Count 78
Organization 512Mx8
Просмотр сходства
K4A4G085WE-BIRC0CV brand manufacturers: Samsung Semiconductor, Anli stock, K4A4G085WE-BIRC0CV reference price.Samsung Semiconductor. K4A4G085WE-BIRC0CV parameters, K4A4G085WE-BIRC0CV Datasheet PDF and pin diagram description download.You can use the K4A4G085WE-BIRC0CV Memory, DSP Datesheet PDF, find K4A4G085WE-BIRC0CV pin diagram and circuit diagram and usage method of function,K4A4G085WE-BIRC0CV electronics tutorials.You can download from the Anli.