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K4A4G085WE-BIRCTCV Технические параметры

Samsung Semiconductor  K4A4G085WE-BIRCTCV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR4 SDRAM
Chip Density (bit) 4G
Supplier Package FBGA
PCB changed 78
Package Length 11
Package Width 7.5
Mounting Surface Mount
Number of I/O Lines (bit) 8I/O Lines (bit)s
Supplier Temperature Grade Industrial
Maximum Operating Temperature (°C) 95
Свойство продукта Значение свойства
Minimum Operating Temperature (°C) -40
Operating Current (mA) 90
Maximum Operating Supply Voltage (V) 1.26
Typical Operating Supply Voltage (V) 1.2
Minimum Operating Supply Voltage (V) 1.14
Interface Type POD
Address Bus Width (bit) 17
Maximum Access Time (ns) 0.175
Maximum Clock Rate (MHz) 2400
Data Bus Width (bit) 8
Number of Bits/Word (bit) 8Bits/Word (bit)s
Number of Words per Bank 32M
Number of Internal Banks 16Internal Banks
Part Status Active
Pin Count 78
Organization 512Mx8
Просмотр сходства
K4A4G085WE-BIRCTCV brand manufacturers: Samsung Semiconductor, Anli stock, K4A4G085WE-BIRCTCV reference price.Samsung Semiconductor. K4A4G085WE-BIRCTCV parameters, K4A4G085WE-BIRCTCV Datasheet PDF and pin diagram description download.You can use the K4A4G085WE-BIRCTCV Memory, DSP Datesheet PDF, find K4A4G085WE-BIRCTCV pin diagram and circuit diagram and usage method of function,K4A4G085WE-BIRCTCV electronics tutorials.You can download from the Anli.