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K4A4G165WD-BCPB0CV Технические параметры

Samsung Semiconductor  K4A4G165WD-BCPB0CV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR4 SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Свойство продукта Значение свойства
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 2133
Address Bus Width (bit) 17
Minimum Operating Supply Voltage (V) 1.14
Typical Operating Supply Voltage (V) 1.2
Maximum Operating Supply Voltage (V) 1.26
Number of I/O Lines (bit) 16I/O Lines (bit)s
Part Status Obsolete
Organization 256Mx16
Просмотр сходства
K4A4G165WD-BCPB0CV brand manufacturers: Samsung Semiconductor, Anli stock, K4A4G165WD-BCPB0CV reference price.Samsung Semiconductor. K4A4G165WD-BCPB0CV parameters, K4A4G165WD-BCPB0CV Datasheet PDF and pin diagram description download.You can use the K4A4G165WD-BCPB0CV Memory, DSP Datesheet PDF, find K4A4G165WD-BCPB0CV pin diagram and circuit diagram and usage method of function,K4A4G165WD-BCPB0CV electronics tutorials.You can download from the Anli.