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K4A4G165WE-BIRC000 Технические параметры

Samsung Semiconductor  K4A4G165WE-BIRC000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR4 SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 2400
Maximum Access Time (ns) 0.175
Address Bus Width (bit) 20
Interface Type POD
Minimum Operating Supply Voltage (V) 1.14
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.2
Maximum Operating Supply Voltage (V) 1.26
Operating Current (mA) 129
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Industrial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Active
Pin Count 96
Organization 256Mx16
K4A4G165WE-BIRC000 brand manufacturers: Samsung Semiconductor, Anli stock, K4A4G165WE-BIRC000 reference price.Samsung Semiconductor. K4A4G165WE-BIRC000 parameters, K4A4G165WE-BIRC000 Datasheet PDF and pin diagram description download.You can use the K4A4G165WE-BIRC000 Memory, DSP Datesheet PDF, find K4A4G165WE-BIRC000 pin diagram and circuit diagram and usage method of function,K4A4G165WE-BIRC000 electronics tutorials.You can download from the Anli.