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K4A8G045WB-BCRC Технические параметры

Samsung Semiconductor  K4A8G045WB-BCRC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Surface Mount YES
Number of Terminals 78Terminals
EU RoHS Compliant
ECCN (US) EAR99
HTS 8542.32.00.36
Automotive No
PPAP No
DRAM Type DDR4 SDRAM
Chip Density (bit) 8G
Number of Internal Banks 16Internal Banks
Number of Words per Bank 128M
Number of Bits/Word (bit) 4Bits/Word (bit)s
Data Bus Width (bit) 4
Maximum Clock Rate (MHz) 2400
Maximum Access Time (ns) 0.175
Address Bus Width (bit) 19
Interface Type POD
Minimum Operating Supply Voltage (V) 1.14
Typical Operating Supply Voltage (V) 1.2
Maximum Operating Supply Voltage (V) 1.26
Operating Current (mA) 93
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 4I/O Lines (bit)s
Mounting Surface Mount
Package Height 0.73
Package Width 7.5
Package Length 11
PCB changed 78
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Package Description FBGA, BGA78,9X13,32
Package Style GRID ARRAY, FINE PITCH
Свойство продукта Значение свойства
Package Body Material PLASTIC/EPOXY
Package Equivalence Code BGA78,9X13,32
Access Time-Max 0.175 ns
Operating Temperature-Max 85 °C
Rohs Code Yes
Manufacturer Part Number K4A8G045WB-BCRC
Clock Frequency-Max (fCLK) 1200 MHz
Supply Voltage-Nom (Vsup) 1.2 V
Package Code FBGA
Package Shape RECTANGULAR
Manufacturer Samsung Semiconductor
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Risk Rank 5.8
Part Status Active
Subcategory DRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Terminal Pitch 0.8 mm
Reach Compliance Code compliant
Pin Count 78
JESD-30 Code R-PBGA-B78
Qualification Status Not Qualified
Power Supplies 1.2 V
Temperature Grade OTHER
Supply Current-Max 0.2359 mA
Organization 2Gx4
Output Characteristics 3-STATE
Standby Current-Max 0.015 A
Memory Density 8589934592 bit
I/O Type COMMON
Memory IC Type DDR DRAM
Refresh Cycles 8192
Sequential Burst Length 4,8
Interleaved Burst Length 4,8
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