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K4A8G085WB-BCRCTCV Технические параметры

Samsung Semiconductor  K4A8G085WB-BCRCTCV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR4 SDRAM
Chip Density (bit) 8G
Number of Internal Banks 16Internal Banks
Number of Words per Bank 64M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 2400
Maximum Access Time (ns) 0.175
Address Bus Width (bit) 18
Interface Type POD
Minimum Operating Supply Voltage (V) 1.14
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.2
Maximum Operating Supply Voltage (V) 1.26
Operating Current (mA) 107
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 11
PCB changed 78
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Active
Pin Count 78
Organization 1Gx8
Просмотр сходства
K4A8G085WB-BCRCTCV brand manufacturers: Samsung Semiconductor, Anli stock, K4A8G085WB-BCRCTCV reference price.Samsung Semiconductor. K4A8G085WB-BCRCTCV parameters, K4A8G085WB-BCRCTCV Datasheet PDF and pin diagram description download.You can use the K4A8G085WB-BCRCTCV Memory, DSP Datesheet PDF, find K4A8G085WB-BCRCTCV pin diagram and circuit diagram and usage method of function,K4A8G085WB-BCRCTCV electronics tutorials.You can download from the Anli.