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K4A8G085WB-BIPBT00 Технические параметры

Samsung Semiconductor  K4A8G085WB-BIPBT00 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
ECCN (US) EAR99
DRAM Type DDR4 SDRAM
Chip Density (bit) 8G
Number of Internal Banks 16Internal Banks
Number of Words per Bank 64M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 2133
Maximum Access Time (ns) 0.18
Address Bus Width (bit) 18
Свойство продукта Значение свойства
Interface Type POD
Minimum Operating Supply Voltage (V) 1.14
Typical Operating Supply Voltage (V) 1.2
Maximum Operating Supply Voltage (V) 1.26
Operating Current (mA) 101
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Industrial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Part Status Obsolete
Organization 1Gx8
Просмотр сходства
K4A8G085WB-BIPBT00 brand manufacturers: Samsung Semiconductor, Anli stock, K4A8G085WB-BIPBT00 reference price.Samsung Semiconductor. K4A8G085WB-BIPBT00 parameters, K4A8G085WB-BIPBT00 Datasheet PDF and pin diagram description download.You can use the K4A8G085WB-BIPBT00 Memory, DSP Datesheet PDF, find K4A8G085WB-BIPBT00 pin diagram and circuit diagram and usage method of function,K4A8G085WB-BIPBT00 electronics tutorials.You can download from the Anli.