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K4A8G165WB-BCTDCV Технические параметры

Samsung Semiconductor  K4A8G165WB-BCTDCV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR4 SDRAM
Chip Density (bit) 8G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 64M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 2666
Maximum Access Time (ns) 0.17
Address Bus Width (bit) 18
Interface Type POD
Minimum Operating Supply Voltage (V) 1.14
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.2
Maximum Operating Supply Voltage (V) 1.26
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Active
Pin Count 96
Organization 512Mx16
Просмотр сходства
K4A8G165WB-BCTDCV brand manufacturers: Samsung Semiconductor, Anli stock, K4A8G165WB-BCTDCV reference price.Samsung Semiconductor. K4A8G165WB-BCTDCV parameters, K4A8G165WB-BCTDCV Datasheet PDF and pin diagram description download.You can use the K4A8G165WB-BCTDCV Memory, DSP Datesheet PDF, find K4A8G165WB-BCTDCV pin diagram and circuit diagram and usage method of function,K4A8G165WB-BCTDCV electronics tutorials.You can download from the Anli.