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K4A8G165WC-BCPBTCV Технические параметры

Samsung Semiconductor  K4A8G165WC-BCPBTCV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR4 SDRAM
Chip Density (bit) 8G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 64M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 2133
Maximum Access Time (ns) 0.18
Address Bus Width (bit) 20
Interface Type POD
Свойство продукта Значение свойства
Minimum Operating Supply Voltage (V) 1.14
Typical Operating Supply Voltage (V) 1.2
Maximum Operating Supply Voltage (V) 1.26
Operating Current (mA) 128
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Supplier Package FBGA
Part Status Active
Pin Count 96
Organization 512Mx16
K4A8G165WC-BCPBTCV brand manufacturers: Samsung Semiconductor, Anli stock, K4A8G165WC-BCPBTCV reference price.Samsung Semiconductor. K4A8G165WC-BCPBTCV parameters, K4A8G165WC-BCPBTCV Datasheet PDF and pin diagram description download.You can use the K4A8G165WC-BCPBTCV Memory, DSP Datesheet PDF, find K4A8G165WC-BCPBTCV pin diagram and circuit diagram and usage method of function,K4A8G165WC-BCPBTCV electronics tutorials.You can download from the Anli.