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K4B1G0846I-BCK0000 Технические параметры

Samsung Semiconductor  K4B1G0846I-BCK0000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 1600
Address Bus Width (bit) 17
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Operating Current (mA) 77
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 11
PCB changed 78
Supplier Package FBGA
Part Status Active
Pin Count 78
Organization 128Mx8
Просмотр сходства
K4B1G0846I-BCK0000 brand manufacturers: Samsung Semiconductor, Anli stock, K4B1G0846I-BCK0000 reference price.Samsung Semiconductor. K4B1G0846I-BCK0000 parameters, K4B1G0846I-BCK0000 Datasheet PDF and pin diagram description download.You can use the K4B1G0846I-BCK0000 Memory, DSP Datesheet PDF, find K4B1G0846I-BCK0000 pin diagram and circuit diagram and usage method of function,K4B1G0846I-BCK0000 electronics tutorials.You can download from the Anli.