[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

K4B1G1646E-HCF7000 Технические параметры

Samsung Semiconductor  K4B1G1646E-HCF7000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 800
Maximum Access Time (ns) 20
Address Bus Width (bit) 16
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Свойство продукта Значение свойства
Maximum Operating Supply Voltage (V) 1.575
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Packaging Tray
Part Status Obsolete
Pin Count 96
Organization 64Mx16
Просмотр сходства
K4B1G1646E-HCF7000 brand manufacturers: Samsung Semiconductor, Anli stock, K4B1G1646E-HCF7000 reference price.Samsung Semiconductor. K4B1G1646E-HCF7000 parameters, K4B1G1646E-HCF7000 Datasheet PDF and pin diagram description download.You can use the K4B1G1646E-HCF7000 Memory, DSP Datesheet PDF, find K4B1G1646E-HCF7000 pin diagram and circuit diagram and usage method of function,K4B1G1646E-HCF7000 electronics tutorials.You can download from the Anli.