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K4B1G1646E-HCF8000 Технические параметры

Samsung Semiconductor  K4B1G1646E-HCF8000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1066
Maximum Access Time (ns) 20
Address Bus Width (bit) 16
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Свойство продукта Значение свойства
Maximum Operating Supply Voltage (V) 1.575
Operating Current (mA) 130
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Packaging Tray
Part Status Obsolete
Pin Count 96
Organization 64Mx16
K4B1G1646E-HCF8000 brand manufacturers: Samsung Semiconductor, Anli stock, K4B1G1646E-HCF8000 reference price.Samsung Semiconductor. K4B1G1646E-HCF8000 parameters, K4B1G1646E-HCF8000 Datasheet PDF and pin diagram description download.You can use the K4B1G1646E-HCF8000 Memory, DSP Datesheet PDF, find K4B1G1646E-HCF8000 pin diagram and circuit diagram and usage method of function,K4B1G1646E-HCF8000 electronics tutorials.You can download from the Anli.