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K4B1G1646I-BYMATCV Технические параметры

Samsung Semiconductor  K4B1G1646I-BYMATCV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive Unknown
PPAP Unknown
DRAM Type DDR3L SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1866
Свойство продукта Значение свойства
Maximum Access Time (ns) 0.195
Address Bus Width (bit) 16
Minimum Operating Supply Voltage (V) 1.425|1.283
Typical Operating Supply Voltage (V) 1.5|1.35
Maximum Operating Supply Voltage (V) 1.575|1.45
Operating Current (mA) 134
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Part Status LTB
Organization 64Mx16
Просмотр сходства
K4B1G1646I-BYMATCV brand manufacturers: Samsung Semiconductor, Anli stock, K4B1G1646I-BYMATCV reference price.Samsung Semiconductor. K4B1G1646I-BYMATCV parameters, K4B1G1646I-BYMATCV Datasheet PDF and pin diagram description download.You can use the K4B1G1646I-BYMATCV Memory, DSP Datesheet PDF, find K4B1G1646I-BYMATCV pin diagram and circuit diagram and usage method of function,K4B1G1646I-BYMATCV electronics tutorials.You can download from the Anli.