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K4B2G0846D-HCH9T00 Технические параметры

Samsung Semiconductor  K4B2G0846D-HCH9T00 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
HTS 8542.32.00.36
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 2G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Свойство продукта Значение свойства
Maximum Clock Rate (MHz) 1333
Maximum Access Time (ns) 0.255
Address Bus Width (bit) 18
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Operating Current (mA) 80
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Number of I/O Lines (bit) 8I/O Lines (bit)s
Part Status Obsolete
Organization 256Mx8
Просмотр сходства
K4B2G0846D-HCH9T00 brand manufacturers: Samsung Semiconductor, Anli stock, K4B2G0846D-HCH9T00 reference price.Samsung Semiconductor. K4B2G0846D-HCH9T00 parameters, K4B2G0846D-HCH9T00 Datasheet PDF and pin diagram description download.You can use the K4B2G0846D-HCH9T00 Memory, DSP Datesheet PDF, find K4B2G0846D-HCH9T00 pin diagram and circuit diagram and usage method of function,K4B2G0846D-HCH9T00 electronics tutorials.You can download from the Anli.