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K4B2G0846F-BCNB000 Технические параметры

Samsung Semiconductor  K4B2G0846F-BCNB000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 2G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 2133
Address Bus Width (bit) 18
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Свойство продукта Значение свойства
Maximum Operating Supply Voltage (V) 1.575
Operating Current (mA) 105
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 11
PCB changed 78
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status LTB
Pin Count 78
Organization 256Mx8
K4B2G0846F-BCNB000 brand manufacturers: Samsung Semiconductor, Anli stock, K4B2G0846F-BCNB000 reference price.Samsung Semiconductor. K4B2G0846F-BCNB000 parameters, K4B2G0846F-BCNB000 Datasheet PDF and pin diagram description download.You can use the K4B2G0846F-BCNB000 Memory, DSP Datesheet PDF, find K4B2G0846F-BCNB000 pin diagram and circuit diagram and usage method of function,K4B2G0846F-BCNB000 electronics tutorials.You can download from the Anli.