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K4B2G0846F-BYK0000 Технические параметры

Samsung Semiconductor  K4B2G0846F-BYK0000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 2G
Number of Internal Banks 8Internal Banks
Свойство продукта Значение свойства
Number of Words per Bank 32M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Minimum Operating Supply Voltage (V) 1.425|1.283
Typical Operating Supply Voltage (V) 1.5|1.35
Maximum Operating Supply Voltage (V) 1.575|1.45
Part Status Obsolete
Organization 256Mx8
Просмотр сходства
K4B2G0846F-BYK0000 brand manufacturers: Samsung Semiconductor, Anli stock, K4B2G0846F-BYK0000 reference price.Samsung Semiconductor. K4B2G0846F-BYK0000 parameters, K4B2G0846F-BYK0000 Datasheet PDF and pin diagram description download.You can use the K4B2G0846F-BYK0000 Memory, DSP Datesheet PDF, find K4B2G0846F-BYK0000 pin diagram and circuit diagram and usage method of function,K4B2G0846F-BYK0000 electronics tutorials.You can download from the Anli.