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K4B2G0846F-BYMATCV Технические параметры

Samsung Semiconductor  K4B2G0846F-BYMATCV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 2G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 1866
Maximum Access Time (ns) 0.195
Address Bus Width (bit) 18
Minimum Operating Supply Voltage (V) 1.425|1.283
Typical Operating Supply Voltage (V) 1.35|1.5
Свойство продукта Значение свойства
Maximum Operating Supply Voltage (V) 1.45|1.575
Operating Current (mA) 90
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 11
PCB changed 78
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Active
Pin Count 78
Organization 256Mx8
Просмотр сходства
K4B2G0846F-BYMATCV brand manufacturers: Samsung Semiconductor, Anli stock, K4B2G0846F-BYMATCV reference price.Samsung Semiconductor. K4B2G0846F-BYMATCV parameters, K4B2G0846F-BYMATCV Datasheet PDF and pin diagram description download.You can use the K4B2G0846F-BYMATCV Memory, DSP Datesheet PDF, find K4B2G0846F-BYMATCV pin diagram and circuit diagram and usage method of function,K4B2G0846F-BYMATCV electronics tutorials.You can download from the Anli.