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K4B2G0846Q-BCK0T00 Технические параметры

Samsung Semiconductor  K4B2G0846Q-BCK0T00 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 2G
Number of Internal Banks 8Internal Banks
Свойство продукта Значение свойства
Number of Words per Bank 32M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Part Status Obsolete
Organization 256Mx8
Просмотр сходства
K4B2G0846Q-BCK0T00 brand manufacturers: Samsung Semiconductor, Anli stock, K4B2G0846Q-BCK0T00 reference price.Samsung Semiconductor. K4B2G0846Q-BCK0T00 parameters, K4B2G0846Q-BCK0T00 Datasheet PDF and pin diagram description download.You can use the K4B2G0846Q-BCK0T00 Memory, DSP Datesheet PDF, find K4B2G0846Q-BCK0T00 pin diagram and circuit diagram and usage method of function,K4B2G0846Q-BCK0T00 electronics tutorials.You can download from the Anli.