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K4B2G1646F-BYK0000 Технические параметры

Samsung Semiconductor  K4B2G1646F-BYK0000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 2G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1600
Maximum Access Time (ns) 0.225
Address Bus Width (bit) 17
Minimum Operating Supply Voltage (V) 1.283|1.425
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.35|1.5
Maximum Operating Supply Voltage (V) 1.45|1.575
Operating Current (mA) 118
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Supplier Package FBGA
Part Status Obsolete
Pin Count 96
Organization 128Mx16
Просмотр сходства
K4B2G1646F-BYK0000 brand manufacturers: Samsung Semiconductor, Anli stock, K4B2G1646F-BYK0000 reference price.Samsung Semiconductor. K4B2G1646F-BYK0000 parameters, K4B2G1646F-BYK0000 Datasheet PDF and pin diagram description download.You can use the K4B2G1646F-BYK0000 Memory, DSP Datesheet PDF, find K4B2G1646F-BYK0000 pin diagram and circuit diagram and usage method of function,K4B2G1646F-BYK0000 electronics tutorials.You can download from the Anli.