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K4B2G1646F-BYMA0CV Технические параметры

Samsung Semiconductor  K4B2G1646F-BYMA0CV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
HTS 8542.32.00.36
Automotive Unknown
PPAP Unknown
DRAM Type DDR3L SDRAM
Chip Density (bit) 2G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Свойство продукта Значение свойства
Maximum Clock Rate (MHz) 1866
Maximum Access Time (ns) 0.195
Address Bus Width (bit) 17
Minimum Operating Supply Voltage (V) 1.283|1.425
Typical Operating Supply Voltage (V) 1.35|1.5
Maximum Operating Supply Voltage (V) 1.45|1.575
Operating Current (mA) 134
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Part Status LTB
Organization 128Mx16
Просмотр сходства
K4B2G1646F-BYMA0CV brand manufacturers: Samsung Semiconductor, Anli stock, K4B2G1646F-BYMA0CV reference price.Samsung Semiconductor. K4B2G1646F-BYMA0CV parameters, K4B2G1646F-BYMA0CV Datasheet PDF and pin diagram description download.You can use the K4B2G1646F-BYMA0CV Memory, DSP Datesheet PDF, find K4B2G1646F-BYMA0CV pin diagram and circuit diagram and usage method of function,K4B2G1646F-BYMA0CV electronics tutorials.You can download from the Anli.