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K4B2G1646F-BYMATCV Технические параметры

Samsung Semiconductor  K4B2G1646F-BYMATCV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 2G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1866
Maximum Access Time (ns) 0.195
Address Bus Width (bit) 17
Minimum Operating Supply Voltage (V) 1.283|1.425
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.35|1.5
Maximum Operating Supply Voltage (V) 1.45|1.575
Operating Current (mA) 134
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Supplier Package FBGA
Part Status LTB
Pin Count 96
Organization 128Mx16
Просмотр сходства
K4B2G1646F-BYMATCV brand manufacturers: Samsung Semiconductor, Anli stock, K4B2G1646F-BYMATCV reference price.Samsung Semiconductor. K4B2G1646F-BYMATCV parameters, K4B2G1646F-BYMATCV Datasheet PDF and pin diagram description download.You can use the K4B2G1646F-BYMATCV Memory, DSP Datesheet PDF, find K4B2G1646F-BYMATCV pin diagram and circuit diagram and usage method of function,K4B2G1646F-BYMATCV electronics tutorials.You can download from the Anli.