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K4B2G1646Q-BCNB000 Технические параметры
Samsung Semiconductor K4B2G1646Q-BCNB000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Supplier Package | FBGA | |
| PCB changed | 96 | |
| Package Length | 13.3 | |
| Package Width | 7.5 | |
| Mounting | Surface Mount | |
| Number of I/O Lines (bit) | 16I/O Lines (bit)s | |
| Supplier Temperature Grade | Commercial | |
| Maximum Operating Temperature (°C) | 95 | |
| Minimum Operating Temperature (°C) | 0 | |
| Operating Current (mA) | 191 | |
| Maximum Operating Supply Voltage (V) | 1.575 | |
| Typical Operating Supply Voltage (V) | 1.5 | |
| Minimum Operating Supply Voltage (V) | 1.425 | |
| Interface Type | SSTL_1.5 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Address Bus Width (bit) | 17 | |
| Maximum Access Time (ns) | 0.18 | |
| Maximum Clock Rate (MHz) | 2133 | |
| Data Bus Width (bit) | 16 | |
| Number of Bits/Word (bit) | 16Bits/Word (bit)s | |
| Number of Words per Bank | 16M | |
| Number of Internal Banks | 8Internal Banks | |
| Chip Density (bit) | 2G | |
| DRAM Type | DDR3 SDRAM | |
| PPAP | No | |
| Automotive | No | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant | |
| Part Status | Obsolete | |
| Pin Count | 96 | |
| Organization | 128Mx16 |
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