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K4B2G1646Q-BMK0000 Технические параметры

Samsung Semiconductor  K4B2G1646Q-BMK0000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 2G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1600
Свойство продукта Значение свойства
Maximum Access Time (ns) 0.225
Address Bus Width (bit) 17
Minimum Operating Supply Voltage (V) 1.283
Typical Operating Supply Voltage (V) 1.35
Maximum Operating Supply Voltage (V) 1.45
Operating Current (mA) 144
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Industrial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Part Status LTB
Organization 128Mx16
Просмотр сходства
K4B2G1646Q-BMK0000 brand manufacturers: Samsung Semiconductor, Anli stock, K4B2G1646Q-BMK0000 reference price.Samsung Semiconductor. K4B2G1646Q-BMK0000 parameters, K4B2G1646Q-BMK0000 Datasheet PDF and pin diagram description download.You can use the K4B2G1646Q-BMK0000 Memory, DSP Datesheet PDF, find K4B2G1646Q-BMK0000 pin diagram and circuit diagram and usage method of function,K4B2G1646Q-BMK0000 electronics tutorials.You can download from the Anli.