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K4B4G0846D-BCH90CV Технические параметры

Samsung Semiconductor  K4B4G0846D-BCH90CV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 64M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 1333
Maximum Access Time (ns) 0.255
Address Bus Width (bit) 19
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Operating Current (mA) 131
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 11
PCB changed 78
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Active
Pin Count 78
Organization 512Mx8
Просмотр сходства
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