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K4B4G0846D-BYH9000 Технические параметры

Samsung Semiconductor  K4B4G0846D-BYH9000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 64M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 1333
Maximum Access Time (ns) 0.255
Address Bus Width (bit) 19
Minimum Operating Supply Voltage (V) 1.283
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.35
Maximum Operating Supply Voltage (V) 1.45
Operating Current (mA) 59
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 11
PCB changed 78
Supplier Package FBGA
Part Status Active
Pin Count 78
Organization 512Mx8
Просмотр сходства
K4B4G0846D-BYH9000 brand manufacturers: Samsung Semiconductor, Anli stock, K4B4G0846D-BYH9000 reference price.Samsung Semiconductor. K4B4G0846D-BYH9000 parameters, K4B4G0846D-BYH9000 Datasheet PDF and pin diagram description download.You can use the K4B4G0846D-BYH9000 Memory, DSP Datesheet PDF, find K4B4G0846D-BYH9000 pin diagram and circuit diagram and usage method of function,K4B4G0846D-BYH9000 electronics tutorials.You can download from the Anli.